PD55035-E - STMicroelectronics

PD55035-E RF POWER transistor

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in.

Features

■ Excellent thermal stability
■ Common source configuration
■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V
■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. Device’s superior linearity perfor.