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PD55008-E |
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| Part Number | PD55008-E |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 ... |
| Features |
■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s super... |
| Document |
 PD55008-E Data Sheet
PDF 462.23KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PD55008S-E |
STMicroelectronics |
RF POWER transistor |
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| 2 | PD55003-E |
STMicroelectronics |
RF POWER transistor |
|
| 3 | PD55003L-E |
STMicroelectronics |
RF POWER transistor |
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| 4 | PD55015-E |
STMicroelectronics |
RF power transistor |
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| 5 | PD55015S-E |
STMicroelectronics |
LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs |
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