PBSS5250TH - nexperia

PBSS5250TH PNP transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat genereation .

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat genereation
• High temperature applications up to 175 °C
• AEC-Q101 qualified 3. Applications
• Power management
• DC-to-DC conversion
• Supply line switches
• Battery charger switches
• Peripheral drivers
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM R.