PBSS5220T - NXP

PBSS5220T PNP low VCEsat (BISS) transistor

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −20 −2 −3 113 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in .

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
• Power management
  – DC/DC converters
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral drivers
  – Driver in low supply voltage applications (e.g. lamps and LEDs)
  – Inductive load driver (e.g. relays, buzzers and motors). handbook, halfpage PBSS5220T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PIN.