PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit B.
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat Quick reference data Conditions open base tp ≤ 300 µs IC = −1 A; IB = −100 mA Min Typ 140 Max −20 −2 −4 210.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS5220PAPS |
nexperia |
PNP/PNP Transistor | |
2 | PBSS5220T |
NXP |
PNP low VCEsat (BISS) transistor | |
3 | PBSS5230PAP |
NXP |
PNP/PNP low VCEsat (BISS) transistor | |
4 | PBSS5230PAP |
nexperia |
2A PNP/PNP low VCEsat (BISS) transistor | |
5 | PBSS5230QA |
NXP |
PNP low VCEsat (BISS) transistor | |
6 | PBSS5230QA |
nexperia |
PNP Transistor | |
7 | PBSS5230T |
NXP |
PNP Transistor | |
8 | PBSS5240T |
NXP |
PNP low VCEsat (BISS) transistor | |
9 | PBSS5240T |
nexperia |
2A PNP low VCEsat transistor | |
10 | PBSS5240V |
NXP |
40 V low VCEsat PNP transistor | |
11 | PBSS5240X |
NXP |
transistor | |
12 | PBSS5240X |
nexperia |
PNP transistor |