PBSS5230T - NXP

PBSS5230T PNP Transistor

PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE(1) 3K* 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESC.

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
• Power management
  – DC/DC converters
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral drivers
  – Driver in low supply voltage applications (e.g. lamps and LEDs)
  – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VC.