PBSS4330X - NXP

PBSS4330X transistor

NPN low VCEsat transistor in a SOT89 plastic package. PINNING PIN 1 emitter 2 collector 3 base DESCRIPTION 321 2 3 1 sym042 MARKING TYPE NUMBER PBSS4330X MARKING CODE(1) *1R Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION TYPE NUMBER PBSS4330X NAME .

Features

• SOT89 (SC-62) package
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT 30 V 3A 5A 100 mΩ APPLICATIONS
• Power management
  – DC/DC converters
  – Supply line switching
  – Battery charger
  – LCD backlighting.
• Peripheral drivers
  – Driver in low supply voltage applications (e.g. lamps a.