PBSS4330PA - nexperia

PBSS4330PA 3A NPN transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5330PA. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Smaller required.

Features

• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability 3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collec.