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NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS 2. Features and benefits • • • • • • • • • • Low collector-emitter saturation voltage VCE.
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Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified
3. Applications
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Loadswitch Battery-driven devices Power management Charging ci.
PBSS4330PAS - nexperia
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadl.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PBSS4330PA |
nexperia |
3A NPN transistor |
|
| 2 | PBSS4330PA |
NXP |
3 A NPN low VCEsat (BISS) transistor |
|
| 3 | PBSS4330X |
NXP |
transistor |
|
| 4 | PBSS4320T |
NXP |
NPN transistor |
|
| 5 | PBSS4320T |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | PBSS4320X |
NXP |
20 V / 3 A NPN low VCEsat (BISS) transistor |
|
| 7 | PBSS4320X |
nexperia |
NPN transistor |
|
| 8 | PBSS4350D |
NXP |
NPN transistor |
|
| 9 | PBSS4350S |
NXP |
50 V low VCEsat NPN transistor |
|
| 10 | PBSS4350SPN |
NXP |
2.7A NPN/PNP Low VCEsat (BISS) Transistor |
|
| 11 | PBSS4350SPN |
nexperia |
NPN/PNP transistor |
|
| 12 | PBSS4350SS |
NXP |
transistor |
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