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NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. MARKING TYPE NUMBER PBSS4320T MARKING CODE(1) ZG* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-emitter voltage collector current (DC) repetitive peak collector c.
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T.
MARKING
TYPE NUMBER PBSS4320T
MARKING CODE(1) ZG
*
Note
1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = .
PBSS4320T - BLUE ROCKET ELECTRONICS
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package. / Features ，。 Low VCE(sat), high current. / .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PBSS4320X |
NXP |
20 V / 3 A NPN low VCEsat (BISS) transistor |
|
| 2 | PBSS4320X |
nexperia |
NPN transistor |
|
| 3 | PBSS4330PA |
nexperia |
3A NPN transistor |
|
| 4 | PBSS4330PA |
NXP |
3 A NPN low VCEsat (BISS) transistor |
|
| 5 | PBSS4330PAS |
NXP |
3A NPN low VCEsat (BISS) transistor |
|
| 6 | PBSS4330PAS |
nexperia |
NPN transistor |
|
| 7 | PBSS4330X |
NXP |
transistor |
|
| 8 | PBSS4350D |
NXP |
NPN transistor |
|
| 9 | PBSS4350S |
NXP |
50 V low VCEsat NPN transistor |
|
| 10 | PBSS4350SPN |
NXP |
2.7A NPN/PNP Low VCEsat (BISS) Transistor |
|
| 11 | PBSS4350SPN |
nexperia |
NPN/PNP transistor |
|
| 12 | PBSS4350SS |
NXP |
transistor |
|