NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V. MARKING TYPE NUMBER PBSS4240V MARKING CODE 42 PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION handbook, halfpage 6 5 4 1, 2, 5, 6 3 123 Top view MAM444 4 Fig.1 Simplified outline (SOT666.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO IC ICRP RCEsat
collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance
MAX. UNIT 40 V 2A 2A <190 mΩ
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD back lighting.
• Peripheral driver:
– Driver in low supply vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS4240DPN |
NXP |
40V low VCEsat NPN/PNP transistor | |
2 | PBSS4240T |
nexperia |
2A NPN low VCEsat transistor | |
3 | PBSS4240T |
NXP |
transistor | |
4 | PBSS4240X |
nexperia |
2A NPN transistor | |
5 | PBSS4240Y |
NXP |
NPN transistor | |
6 | PBSS4240Z |
nexperia |
2A NPN low VCEsat (BISS) transistor | |
7 | PBSS4220PANS |
nexperia |
NPN/NPN Transistor | |
8 | PBSS4220V |
NXP |
2A NPN low VCEsat (BISS) transistor | |
9 | PBSS4230PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
10 | PBSS4230PAN |
nexperia |
2A NPN/NPN low VCEsat (BISS) transistor | |
11 | PBSS4230PANP |
NXP |
NPN/PNP low VCEsat (BISS) transistor | |
12 | PBSS4230PANP |
nexperia |
2A NPN/PNP low VCEsat (BISS) transistor |