NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High .
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
open base
IC colle.
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS4230PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
2 | PBSS4230PAN |
nexperia |
2A NPN/NPN low VCEsat (BISS) transistor | |
3 | PBSS4230QA |
nexperia |
NPN transistor | |
4 | PBSS4230T |
NXP |
NPN low VCEsat (BISS) transistor | |
5 | PBSS4220PANS |
nexperia |
NPN/NPN Transistor | |
6 | PBSS4220V |
NXP |
2A NPN low VCEsat (BISS) transistor | |
7 | PBSS4240DPN |
NXP |
40V low VCEsat NPN/PNP transistor | |
8 | PBSS4240T |
nexperia |
2A NPN low VCEsat transistor | |
9 | PBSS4240T |
NXP |
transistor | |
10 | PBSS4240V |
NXP |
NPN transistor | |
11 | PBSS4240X |
nexperia |
2A NPN transistor | |
12 | PBSS4240Y |
NXP |
NPN transistor |