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NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. MARKING TYPE NUMBER PBSS4240T MARKING CODE(1) ZE* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO ICM RCEsat collector-emitter voltage peak collector current equivalent on-resistance MAX. UNIT .
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T.
MARKING
TYPE NUMBER PBSS4240T
MARKING CODE(1) ZE
*
Note
1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* =.
PBSS4240T - nexperia
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PBSS4240DPN |
NXP |
40V low VCEsat NPN/PNP transistor |
|
| 2 | PBSS4240V |
NXP |
NPN transistor |
|
| 3 | PBSS4240X |
nexperia |
2A NPN transistor |
|
| 4 | PBSS4240Y |
NXP |
NPN transistor |
|
| 5 | PBSS4240Z |
nexperia |
2A NPN low VCEsat (BISS) transistor |
|
| 6 | PBSS4220PANS |
nexperia |
NPN/NPN Transistor |
|
| 7 | PBSS4220V |
NXP |
2A NPN low VCEsat (BISS) transistor |
|
| 8 | PBSS4230PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor |
|
| 9 | PBSS4230PAN |
nexperia |
2A NPN/NPN low VCEsat (BISS) transistor |
|
| 10 | PBSS4230PANP |
NXP |
NPN/PNP low VCEsat (BISS) transistor |
|
| 11 | PBSS4230PANP |
nexperia |
2A NPN/PNP low VCEsat (BISS) transistor |
|
| 12 | PBSS4230QA |
nexperia |
NPN transistor |
|