NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller.
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base tp ≤ 300 µs IC = 1 A; IB = 100 mA [1] Symbol Parameter coll.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PBSS4220PANS |
nexperia |
NPN/NPN Transistor | |
2 | PBSS4230PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor | |
3 | PBSS4230PAN |
nexperia |
2A NPN/NPN low VCEsat (BISS) transistor | |
4 | PBSS4230PANP |
NXP |
NPN/PNP low VCEsat (BISS) transistor | |
5 | PBSS4230PANP |
nexperia |
2A NPN/PNP low VCEsat (BISS) transistor | |
6 | PBSS4230QA |
nexperia |
NPN transistor | |
7 | PBSS4230T |
NXP |
NPN low VCEsat (BISS) transistor | |
8 | PBSS4240DPN |
NXP |
40V low VCEsat NPN/PNP transistor | |
9 | PBSS4240T |
nexperia |
2A NPN low VCEsat transistor | |
10 | PBSS4240T |
NXP |
transistor | |
11 | PBSS4240V |
NXP |
NPN transistor | |
12 | PBSS4240X |
nexperia |
2A NPN transistor |