P4NK60Z - STMicroelectronics

P4NK60Z STP4NK60Z

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding application.

Features

TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP
• 100% avalanche tested
• Very low intrinsic capacitances
• Zener-protected ID 4A Figure 1. Internal schematic diagram D(2, TAB) G(1) Applications
• Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level .