P2003BDG - NIKO-SEM

P2003BDG N-Channel MOSFET

NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ ID 32A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Conti.

Features

TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 25 1.0 1.8 2.5 V VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 A 250 VDS = 10V, VGS = 10V 110 A REV 1.0 Sep-09-2009 1 NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free Drain-Source On-State Resistance1 Forward Tr.