Features
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TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Current1
V(BR)DSS VGS(th) IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A VDS = VGS, ID = 250A
25 1.0 1.8
2.5
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C
25 A
250
VDS = 10V, VGS = 10V
110
A
REV 1.0
Sep-09-2009 1
NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK) Halogen-Free & Lead-Free
Drain-Source On-State Resistance1 Forward Tr...
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