P2003BT - UNIKC

P2003BT N-Channel MOSFET

P2003BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 20mΩ @VGS = 10V 39A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID.

Features

Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 30 1 1.6 2.5 ±250 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 120 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = 5V, ID = 8A 17 20 28 32 17 DYNAMIC Input Capacitance Ciss 474 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 184 Reverse Transfer Capacitance Crss 115 Gate Resistance Rg VGS = 0V, VDS = 0.