P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS 30 ±20 28 Continuous Drain Current Pulsed Drain Current1 Avalanche Cur.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P2003BE |
UNIKC |
MOSFET | |
2 | P2003BEAA |
UNIKC |
MOSFET | |
3 | P2003BDG |
UNIKC |
N-Channel MOSFET | |
4 | P2003BDG |
NIKO-SEM |
N-Channel MOSFET | |
5 | P2003BT |
UNIKC |
N-Channel MOSFET | |
6 | P2003BV |
UNIKC |
N-Channel MOSFET | |
7 | P2003BVG |
Niko |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | P2003BVG |
UNIKC |
N-Channel Enhancement Mode MOSFET | |
9 | P2003BVT |
UNIKC |
N-Channel MOSFET | |
10 | P2003ED |
UNIKC |
P-Channel MOSFET | |
11 | P2003EEA |
UNIKC |
MOSFET | |
12 | P2003EEAA |
UNIKC |
MOSFET |