P1615ATFA - UNIKC

P1615ATFA N-Channel MOSFET

P1615ATFA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 16.5mΩ @VGS = 10V 42A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100.

Features

reakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 150 V 2.5 3.5 4.5 VDS = 0V, VGS = ±25V ±100 nA VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V , TJ = 125 °C 1 mA 10 Drain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 20A VGS = 10V, ID = 20A 13.5 18.5 mΩ 12.5 16.5 Forward Transconductance1 gfs VDS = 10V, ID = 20A 37 S DYNAMIC Input Capacitance Ciss 3426 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 523 pF Reverse Transfer Capacitance Crss 198 Gate R.