P1610AT - UNIKC

P1610AT N-Channel MOSFET

P1610AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110V 16mΩ @VGS = 10V 51A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C ID 51 TC = 100 °C 32 IDM 150 Avalan.

Features

rain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 110 2 3.2 4 ±100 Zero Gate Voltage Drain Current IDSS VDS = 88V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 7V, ID = 15A VGS = 10V, ID = 20A VDS = 10V, ID = 20A 14 21 13 16 80 DYNAMIC Input Capacitance Ciss 3009 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 258 Reverse Transfer Capacitance Crss 152 Gate Resistance Total Gate Ch.