P1006BI - UNIKC

P1006BI N-Channel MOSFET

P1006BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID ID.

Features

Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 60 1.3 1.8 2.3 ±100 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 125 °C 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 20A VGS = 10V, ID = 20A VDS = 10V, ID = 20A 8.1 13 6.8 10 60 DYNAMIC Input Capacitance Ciss 1920 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 215 Reverse Transfer Capacitance Crss 140 Gate Resistance Rg V.