P1006BTFS - UNIKC

P1006BTFS N-Channel MOSFET

P1006BTF / P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10mΩ @VGS = 10V 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC=.

Features

STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS =48V, VGS = 0V VDS =40V, VGS = 0V, TJ = 125°C 60 V 1.3 1.8 2.3 ±100 nA 1 mA 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 20A VGS =10V, ID = 20A VDS =10V, ID = 20A 8.2 13 mΩ 7 10 60 S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Tur.