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P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | P1006BI |
UNIKC |
N-Channel MOSFET |
|
| 2 | P1006BD |
UNIKC |
N-Channel Transistor |
|
| 3 | P1006BK |
UNIKC |
MOSFET |
|
| 4 | P1006BK |
NIKO-SEM |
N-Channel MOSFET |
|
| 5 | P1006BT |
NIKO-SEM |
N-Channel Transistor |
|
| 6 | P1006BT |
UNIKC |
N-Channel MOSFET |
|
| 7 | P1006BTF |
NIKO-SEM |
N-Channel Transistor |
|
| 8 | P1006BTF |
UNIKC |
N-Channel MOSFET |
|
| 9 | P1006BTFS |
UNIKC |
N-Channel MOSFET |
|
| 10 | P100 |
International Rectifier |
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS |
|
| 11 | P1000A |
Diotec Semiconductor |
Silicon Rectifiers |
|
| 12 | P1000A |
Semikron International |
(P1000x) Standard silicon rectifier diodes |
|