Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, re.
• 1200 V @ TJ = 175°C
• Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
• High Speed Switching with Low Capacitance
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Applications
• Automotive Auxiliary Motor Drive
• Automotive On Board Charger
• Automotive DC−DC Converter for EV/HEV
DATA SHEET www.onsemi.com
VDSS 1200 V
RDS(ON) TYP 80 mW
ID MAX 29 A
N−CHANNEL MOSFET D
S1: Kelvin Source
G
S2: Power Source
S1 S2
D S2 S1 G TO−247−4LD CASE 340CJ
MARKING DIAGRAM
AYWWZ.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 2 | NVH4L022N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 3 | NVH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | NVH4L040N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 5 | NVH4L040N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 6 | NVH4L040N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | NVH4L045N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 8 | NVH4L050N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | NVH4L060N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 10 | NVH4L110N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | NVH4L160N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 12 | NVH025N65S3 |
ON Semiconductor |
Automotive N-Channel MOSFET |
|