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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 137 nC) • High Speed Switching with Low Capacitance (Coss = 146 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and .
• Typ. RDS(on) = 22 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 137 nC)
• High Speed Switching with Low Capacitance (Coss = 146 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS −10/+22 V
Recommended Operation Values TC <.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NVH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 2 | NVH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | NVH4L040N120M3S |
ON Semiconductor |
SiC MOSFET |
|
| 4 | NVH4L040N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 5 | NVH4L040N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | NVH4L045N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 7 | NVH4L050N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | NVH4L060N065SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 9 | NVH4L080N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 10 | NVH4L110N65S3F |
ON Semiconductor |
N-Channel MOSFET |
|
| 11 | NVH4L160N120SC1 |
ON Semiconductor |
SiC MOSFET |
|
| 12 | NVH025N65S3 |
ON Semiconductor |
Automotive N-Channel MOSFET |
|