NVH4L080N120SC1 |
Part Number | NVH4L080N120SC1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chi... |
Features |
• 1200 V @ TJ = 175°C • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Applications • Automotive Auxiliary Motor Drive • Automotive On Board Charger • Automotive DC−DC Converter for EV/HEV DATA SHEET www.onsemi.com VDSS 1200 V RDS(ON) TYP 80 mW ID MAX 29 A N−CHANNEL MOSFET D S1: Kelvin Source G S2: Power Source S1 S2 D S2 S1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM AYWWZ... |
Document |
NVH4L080N120SC1 Data Sheet
PDF 371.08KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NVH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET | |
2 | NVH4L022N120M3S |
ON Semiconductor |
SiC MOSFET | |
3 | NVH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET | |
4 | NVH4L040N120M3S |
ON Semiconductor |
SiC MOSFET | |
5 | NVH4L040N120SC1 |
ON Semiconductor |
SiC MOSFET |