NVH4L080N120SC1 ON Semiconductor SiC MOSFET Datasheet, en stock, prix

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NVH4L080N120SC1

ON Semiconductor
NVH4L080N120SC1
NVH4L080N120SC1 NVH4L080N120SC1
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Part Number NVH4L080N120SC1
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chi...
Features
• 1200 V @ TJ = 175°C
• Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
• High Speed Switching with Low Capacitance
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Applications
• Automotive Auxiliary Motor Drive
• Automotive On Board Charger
• Automotive DC−DC Converter for EV/HEV DATA SHEET www.onsemi.com VDSS 1200 V RDS(ON) TYP 80 mW ID MAX 29 A N−CHANNEL MOSFET D S1: Kelvin Source G S2: Power Source S1 S2 D S2 S1 G TO−247−4LD CASE 340CJ MARKING DIAGRAM AYWWZ...

Document Datasheet NVH4L080N120SC1 Data Sheet
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