DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exe.
• Typ. RDS(on) = 40 mW
• Ultra Low Gate Charge (QG(tot) = 106 nC)
• High Speed Switching with Low Capacitance (Coss = 137 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS −15/+25 V
Recommended Operation Values TC < 175°C VGSop.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVH4L040N120M3S |
ON Semiconductor |
SiC MOSFET | |
2 | NVH4L040N65S3F |
ON Semiconductor |
N-Channel MOSFET | |
3 | NVH4L045N065SC1 |
ON Semiconductor |
SiC MOSFET | |
4 | NVH4L020N120SC1 |
ON Semiconductor |
SiC MOSFET | |
5 | NVH4L022N120M3S |
ON Semiconductor |
SiC MOSFET | |
6 | NVH4L027N65S3F |
ON Semiconductor |
N-Channel MOSFET | |
7 | NVH4L050N65S3F |
ON Semiconductor |
N-Channel MOSFET | |
8 | NVH4L060N065SC1 |
ON Semiconductor |
SiC MOSFET | |
9 | NVH4L080N120SC1 |
ON Semiconductor |
SiC MOSFET | |
10 | NVH4L110N65S3F |
ON Semiconductor |
N-Channel MOSFET | |
11 | NVH4L160N120SC1 |
ON Semiconductor |
SiC MOSFET | |
12 | NVH025N65S3 |
ON Semiconductor |
Automotive N-Channel MOSFET |