NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
• Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive (MOSFET)
• Performance DFN Package
• This is a Pb−Free Device
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS FOR P−CHANNEL FET (TA = 25°C unless otherwise noted)
Rating
Steady Symbol 5 sec State Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Note 1)
VDS
−20
V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NUS5531MT |
ON Semiconductor |
Main Switch Power MOSFET and Single Charging BJT | |
2 | NUS1204MN |
ON Semiconductor |
Overvoltage Protection | |
3 | NUS2045MN |
ON Semiconductor |
Overvoltage Protection | |
4 | NUS2401SNT1 |
ON Semiconductor |
Integrated PNP/NPN Digital Transistors Array | |
5 | NUS2501W6 |
ON Semiconductor |
Integrated NPN Digital Transistor | |
6 | NUS3045MN |
ON Semiconductor |
Overvoltage Protection | |
7 | NUS3046MN |
ON Semiconductor |
Overvoltage Protection | |
8 | NUS3055MUTAG |
ON Semiconductor |
Low Profile Overvoltage Protection | |
9 | NUS3116MT |
ON Semiconductor |
Main Switch Power MOSFET and Dual Charging BJT | |
10 | NUS6160MN |
ON Semiconductor |
Low Profile Overvoltage Protection | |
11 | NUS6189MN |
ON Semiconductor |
Low Profile Overvoltage Protection | |
12 | NU503B |
NumEn |
20mA Constant Current Regulator |