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NUS5530MN - ON Semiconductor

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NUS5530MN Integrated Power MOSFET

NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.

Features


• Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive (MOSFET)
• Performance DFN Package
• This is a Pb−Free Device Applications
• Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS FOR P−CHANNEL FET (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 sec State Unit Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Note 1) VDS −20 V.

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