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NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics. Feat.
• High Performance Power MOSFET
• Dual−Low Vce(sat) Transistors as Charging Power Mux
• 3.0x3.0x0.8 mm WDFN Package
• Independent Pin−out Provides Circuit Flexibility
• Low Profile (<0.8 mm) for Easy Fit in Thin Environments
• This is a Pb−Free Device
Applications
• Main Switch and Battery Charging Mux for Portable Electronics
• Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
1 2 3
D
8 C
7
6
www.onsemi.com
V(BR)DSS −12 V
MOSFET RDS(on) TYP 32 mW @ −4.5 V 44 mW @ −2.5 V
ID MAX −6.2 A
Low Vce(sat) PNP (Wall)
VCEO MAX
VEBO MAX
IC MAX
−30 V
−8.0 V
−2.0 A
Low Vce(sat) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NUS3045MN |
ON Semiconductor |
Overvoltage Protection |
|
| 2 | NUS3046MN |
ON Semiconductor |
Overvoltage Protection |
|
| 3 | NUS3055MUTAG |
ON Semiconductor |
Low Profile Overvoltage Protection |
|
| 4 | NUS1204MN |
ON Semiconductor |
Overvoltage Protection |
|
| 5 | NUS2045MN |
ON Semiconductor |
Overvoltage Protection |
|
| 6 | NUS2401SNT1 |
ON Semiconductor |
Integrated PNP/NPN Digital Transistors Array |
|
| 7 | NUS2501W6 |
ON Semiconductor |
Integrated NPN Digital Transistor |
|
| 8 | NUS5530MN |
ON Semiconductor |
Integrated Power MOSFET |
|
| 9 | NUS5531MT |
ON Semiconductor |
Main Switch Power MOSFET and Single Charging BJT |
|
| 10 | NUS6160MN |
ON Semiconductor |
Low Profile Overvoltage Protection |
|
| 11 | NUS6189MN |
ON Semiconductor |
Low Profile Overvoltage Protection |
|
| 12 | NU503B |
NumEn |
20mA Constant Current Regulator |
|