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NUS5530MN |
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| Part Number | NUS5530MN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with... |
| Features |
• Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package • This is a Pb−Free Device Applications • Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS FOR P−CHANNEL FET (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 sec State Unit Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Note 1) VDS −20 V... |
| Document |
 NUS5530MN Data Sheet
PDF 223.93KB |
| Distributor | Stock | Price | Buy |
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