Pin # Symbol Pin Description 1 IN This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold (VTH), the OUT pin will be driven to within 1.0 V of VCC, thus disconnecting the P−Channel Power MOSFET. The nominal threshold level is 6.85 V and this threshold level can be increased with the addition of an .
• OvervoltageTurn−Off Time of Less Than 1.0 ms
• Accurate Voltage Threshold of 6.85 V, Nominal
• Undervoltage Lockout Protection; 2.8 V, Nominal
• High Accuracy Undervoltage Threshold of 2.0%
• −30 V Integrated P−Channel Power MOSFET
• Low RDS(on) = 75 mW @ −4.5 V
• Low Profile 0.55 mm height, 2.5 X 3.0 mm LLGA Package Suitable
for Portable Applications
• Maximum Solder Reflow Temperature @ 260°C
• This device is manufactured with a Pb−Free external lead finish only.
Benefits
• Provide Battery Protection
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NUS3045MN |
ON Semiconductor |
Overvoltage Protection | |
2 | NUS3046MN |
ON Semiconductor |
Overvoltage Protection | |
3 | NUS3116MT |
ON Semiconductor |
Main Switch Power MOSFET and Dual Charging BJT | |
4 | NUS1204MN |
ON Semiconductor |
Overvoltage Protection | |
5 | NUS2045MN |
ON Semiconductor |
Overvoltage Protection | |
6 | NUS2401SNT1 |
ON Semiconductor |
Integrated PNP/NPN Digital Transistors Array | |
7 | NUS2501W6 |
ON Semiconductor |
Integrated NPN Digital Transistor | |
8 | NUS5530MN |
ON Semiconductor |
Integrated Power MOSFET | |
9 | NUS5531MT |
ON Semiconductor |
Main Switch Power MOSFET and Single Charging BJT | |
10 | NUS6160MN |
ON Semiconductor |
Low Profile Overvoltage Protection | |
11 | NUS6189MN |
ON Semiconductor |
Low Profile Overvoltage Protection | |
12 | NU503B |
NumEn |
20mA Constant Current Regulator |