This schottky barrier diode is designed to realize compact and efficient designs. Two schottky barrier diodes are incorporated in one SC−59 package. The use of dual schottky barrier diodes can reduce both system cost and board space. This schottky barrier diode is AEC−Q101 qualified and PPAP capable for automotive applications. Features • Series Connection o.
• Series Connection of 2 Elements in a Small−Sized Package
• Small Interterminal Capacitance (C = 0.69 pF typ)
• Small Forward Voltage (VF = 0.23 V max)
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• AEC−Q101 Qualified and PPAP Capable
Typical Applications
• Level Detector for Radio
Specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Value
Unit
Reverse Voltage Forward Current Operating Junction and Storage Temperature
VRM IF
TJ, TStg
5 30 −55 to +125
V mA °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NSVR0230M2T5G |
ON Semiconductor |
Schottky Barrier Diode | |
2 | NSVR0230P2 |
ON Semiconductor |
Schottky Barrier Diode | |
3 | NSVR0240V2 |
ON Semiconductor |
Schottky Barrier Diode | |
4 | NSVR0240V2T1G |
ON Semiconductor |
Schottky Barrier Diode | |
5 | NSVR0320MW2T1G |
ON Semiconductor |
Schottky Barrier Diodes | |
6 | NSVR0520V2 |
ON Semiconductor |
Schottky Barrier Diode | |
7 | NSVR201MX |
ON Semiconductor |
Schottky Barrier Diode | |
8 | NSVRB521S30T1G |
ON Semiconductor |
Schottky Barrier Diode | |
9 | NSV1C200L |
ON Semiconductor |
PNP Transistor | |
10 | NSV1C200MZ4 |
ON Semiconductor |
PNP Transistor | |
11 | NSV1C201MZ4 |
ON Semiconductor |
NPN Transistor | |
12 | NSV1C300CT |
ON Semiconductor |
Bipolar Power Transistors |