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NSVR201MX Schottky Barrier Diode for Mixer and Detector Automotive Schottky Barrier Diode designed for compact and efficient designs. AEC−Q101 qualified Schottky Barrier Diode and PPAP capable suitable for automotive applications. Features • Small Interterminal Capacitance • Less Parasitic Components • Small Forward Voltage • Small−sized Package • Pb−Free.
• Small Interterminal Capacitance
• Less Parasitic Components
• Small Forward Voltage
• Small−sized Package
• Pb−Free, Halogen Free and RoHS Compliant
• AEC−Q101 Qualified and PPAP Capable
Typical Applications
• Microwave and Submilliwave Mixer
• Microwave and Submilliwave Detector
Specifications
Table 1. ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Symbol
Value
Unit
Reverse Voltage Forward Current Operating Junction and Storage Temperature
VR IF TJ, Tstg
2 50 −55 to +150
V mA °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NSVR0230M2T5G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 2 | NSVR0230P2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 3 | NSVR0240V2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | NSVR0240V2T1G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 5 | NSVR0320MW2T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 6 | NSVR0520V2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 7 | NSVR351SDSA3 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 8 | NSVRB521S30T1G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 9 | NSV1C200L |
ON Semiconductor |
PNP Transistor |
|
| 10 | NSV1C200MZ4 |
ON Semiconductor |
PNP Transistor |
|
| 11 | NSV1C201MZ4 |
ON Semiconductor |
NPN Transistor |
|
| 12 | NSV1C300CT |
ON Semiconductor |
Bipolar Power Transistors |
|