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NSR0230P2, NSVR0230P2, Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features • Extremely Fast.
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA
• Low Reverse Current
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage Forward Current DC Forward Current Surge Peak
(60 Hz, 1 cycle)
VR 30 Vdc
IF 200 mA
IFSM
1.0
A
ESD Rating: Class 3B per Human Body Model ESD Rating: Class C per Machine Model
Stresses exceeding Maximum R.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NSVR0230M2T5G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 2 | NSVR0240V2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 3 | NSVR0240V2T1G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | NSVR0320MW2T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 5 | NSVR0520V2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 6 | NSVR201MX |
ON Semiconductor |
Schottky Barrier Diode |
|
| 7 | NSVR351SDSA3 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 8 | NSVRB521S30T1G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 9 | NSV1C200L |
ON Semiconductor |
PNP Transistor |
|
| 10 | NSV1C200MZ4 |
ON Semiconductor |
PNP Transistor |
|
| 11 | NSV1C201MZ4 |
ON Semiconductor |
NPN Transistor |
|
| 12 | NSV1C300CT |
ON Semiconductor |
Bipolar Power Transistors |
|