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NSR0240V2T1G, NSVR0240V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0240V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving high.
Very Low Forward Voltage Drop − 480 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 4 pF
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
This is a Pb−Free Device
*
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Curren.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NSVR0240V2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 2 | NSVR0230M2T5G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 3 | NSVR0230P2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | NSVR0320MW2T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 5 | NSVR0520V2 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 6 | NSVR201MX |
ON Semiconductor |
Schottky Barrier Diode |
|
| 7 | NSVR351SDSA3 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 8 | NSVRB521S30T1G |
ON Semiconductor |
Schottky Barrier Diode |
|
| 9 | NSV1C200L |
ON Semiconductor |
PNP Transistor |
|
| 10 | NSV1C200MZ4 |
ON Semiconductor |
PNP Transistor |
|
| 11 | NSV1C201MZ4 |
ON Semiconductor |
NPN Transistor |
|
| 12 | NSV1C300CT |
ON Semiconductor |
Bipolar Power Transistors |
|