NP6884D6 - natlinear

NP6884D6 40V Dual N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6884D6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features  VDS =40V，ID =26A RDS(ON)=13.7 mΩ (typical) @ VGS=10V RDS(ON)=17.8 mΩ (typical) @ VGS=4.5V  Excellent gate charge x RDS(ON).

Features

 VDS =40V，ID =26A RDS(ON)=13.7 mΩ (typical) @ VGS=10V RDS(ON)=17.8 mΩ (typical) @ VGS=4.5V  Excellent gate charge x RDS(ON) product(FOM)  Very low on-resistance RDS(ON)  150 °C operating temperature  Pb-free lead plating  100% UIS tested Application S1 S2 Marking and pin assignment PDFN5×6-8L-B D1 D1 D2 D2 D2 D2 D1 D1 NP6884 XXXXX YYYYY  DC/DC Converter  Ideal for high-frequency switching and synchronous rectification S1 G1 S2 G2 Top View G2 S2 G1 S1 Bottom View Package  PDFN5
*6-8L-B XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6884D6-G St.