Schematic diagram The NP60P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS =-20V ID =-60A RDS(ON)(Typ.)=3.8mΩ @VGS=-4.5V RDS(ON)(Typ.)=4.4mΩ @VGS=-2.5V High power and current handing capability Lead free product is acquired Surface moun.
VDS =-20V ID =-60A RDS(ON)(Typ.)=3.8mΩ @VGS=-4.5V RDS(ON)(Typ.)=4.4mΩ @VGS=-2.5V
High power and current handing capability Lead free product is acquired Surface mount package 150 °C operating temperature 100% UIS tested
Marking and pin assignment
Application
PWM applications Load switch Uninterruptible power supply
Package
PDFN5
*6-8L-A
100% UIS TESTED! XXXX—Wafer Information 100% ∆Vds TESTED! YYYY—Quality Code
Ordering Information
Part Number NP60P02D6-G
Storage Temperature -55°C to +150°C
Package PDFN5
*6-8L-A
Absolute Maximum Ratings (TA=25℃ unless otherwise noted.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP6008BSR |
natlinear |
60V N-Channel Enhancement Mode MOSFET | |
2 | NP6008N |
natlinear |
60V N-Channel Enhancement Mode MOSFET | |
3 | NP6020D6-Sn |
natlinear |
60V N-Channel Enhancement Mode MOSFET | |
4 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET | |
6 | NP60N04KUG |
Renesas |
N-Channel MOSFET | |
7 | NP60N04MUG |
Renesas |
N-Channel Power MOSFET | |
8 | NP60N04MUK |
Renesas |
N-Channel MOSFET | |
9 | NP60N04NUK |
Renesas |
N-Channel MOSFET | |
10 | NP60N04PDK |
Renesas |
N-Channel Power MOSFET | |
11 | NP60N04VDK |
Renesas |
N-Channel MOSFET | |
12 | NP60N04VLK |
Renesas |
N-Channel MOSFET |