NP3P06MR - natlinear

NP3P06MR 60V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP3P06MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features  VDS =-60V，ID =-3A RDS(ON)(Typ)=123.5mΩ @VGS=-10V RDS(ON)(Typ)=160mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is .

Features

 VDS =-60V，ID =-3A RDS(ON)(Typ)=123.5mΩ @VGS=-10V RDS(ON)(Typ)=160mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment Application  Battery protection  Load switch Package  SOT-23-3L Ordering Information Part Number NP3P06MR-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Current C Maximum power dissipation B Operat.