NP3065D6 - natlinear

NP3065D6 30V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General.

Features

Marking and pin assignment  VDS =30V，ID =65A RDS(ON)(Typ.)=6.3mΩ @VGS=10V RDS(ON)(Typ.)=9mΩ @VGS=4.5V  Excellent gate charge x RDS(on) product(FOM)  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Application  Synchronus Rectification in DC/DC and AC/DC Converters  Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP3065D6-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-A Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source v.