NP3095G - natlinear

NP3095G 30V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features  VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V  High power and current handing capability  Lead free product is acquired  Surface mo.

Features

 VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment Application  Load switch Package  TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP3095G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V TC=25°C Continuous D.