NP2309EFR - natlinear

NP2309EFR 20V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP2309EFR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-20V，ID =-2A RDS(ON)(Typ.)=61.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=70.5mΩ @VGS=-2.5V  High power and current.

Features

 VDS =-20V，ID =-2A RDS(ON)(Typ.)=61.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=70.5mΩ @VGS=-2.5V  High power and current handing capability  Lead free product is acquired  Surface mount package  ESD Rating: 2500V HBM Application  PWM applications  Load switch Marking and pin assignment SOT-363 (TOP VIEW) DDS 6 5 4 2309 Package  SOT-363 HF Pb 1 2 3 D DG Ordering Information Part Number NP2309EFR-G Storage Temperature -55°C to +150°C Package SOT-363 Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Dra.