NP2305MR-M - natlinear

NP2305MR-M 20V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP2305MR-M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features  VDS =-20V，ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V  High power and curre.

Features

 VDS =-20V，ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Application  PWM applications  Load switch D Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 235L Package  SOT-23-3L 1 2 G S Ordering Information Part Number NP2305MR-M-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db D.