Schematic diagram The NP2301BVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features VDS =-20V,ID =-2A RDS(ON)(Typ.)= 108mΩ @VGS=-4.5V RDS(ON)(Typ.)= 136mΩ @VGS=-2.5V High power and current.
VDS =-20V,ID =-2A RDS(ON)(Typ.)= 108mΩ @VGS=-4.5V RDS(ON)(Typ.)= 136mΩ @VGS=-2.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment Application PWM applications Load switch Package SOT-23 Ordering Information Part Number NP2301BVR-G Storage Temperature -55°C to +150°C Package SOT-23 Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain Current-Continuous (Silicon Limited) TA=25°C TA=70°C Pulsed Drain Current (Packa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP2301AVR |
natlinear |
20V P-Channel Enhancement Mode MOSFET | |
2 | NP2305MR-M |
natlinear |
20V P-Channel Enhancement Mode MOSFET | |
3 | NP2309EFR |
natlinear |
20V P-Channel Enhancement Mode MOSFET | |
4 | NP23N06YDG |
Renesas |
N-Channel Power MOSFET | |
5 | NP200S15LL |
natlinear |
150V N-Channel Enhancement Mode MOSFET | |
6 | NP2012 |
natlinear |
20V N-Channel Enhancement Mode MOSFET | |
7 | NP20N10YDF |
Renesas |
N-Channel MOSFET | |
8 | NP20P04SLG |
Renesas |
P-Channel Power MOSFET | |
9 | NP20P06SLG |
Renesas |
P-channel Power MOSFET | |
10 | NP20P06YLG |
Renesas |
N-Channel Power MOSFET | |
11 | NP22N055HHE |
Renesas |
N-Channel Power MOSFET | |
12 | NP22N055HLE |
Renesas |
N-Channel Power MOSFET |