NP2012 - natlinear

NP2012 20V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V  High power and current handing c.

Features

 VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment DFN2
*2-6L-B （Thickness 0.55mm） Application  PWM applications  Load switch Package  DFN2
*2-6L-B NP----Natlinear Power 2012----NP2012 Ordering Information Part Number NP2012DR-G Storage Temperature -55°C to +150°C Package DFN2
*2-6L-B Devices Per Reel 4000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-contin.