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Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications • Maximum junction temperature Tj=175°C • Diode VF=1.7V typ. (IF=30A) • Diode .
• IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
• IGBT IC=100A (Tc=25°C)
• IGBT tf=80ns typ.
• Low switching loss in higher frequency applications
• Maximum junction temperature Tj=175°C
• Diode VF=1.7V typ. (IF=30A)
• Diode trr=70ns typ.
• 5μs short circuit capability
• Pb-free, Halogen-free and RoHS Compliance
Electrical Connection
C
G
N-channel
E
Applications
• Power factor correction of white goods appliance
Specifications
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage Collector Current (DC) Limited by Tj.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NGTB30N60FLWG |
ON Semiconductor |
IGBT |
|
| 2 | NGTB30N60FWG |
ON Semiconductor |
IGBT |
|
| 3 | NGTB30N60IHLWG |
ON Semiconductor |
IGBT |
|
| 4 | NGTB30N60SWG |
ON Semiconductor |
IGBT |
|
| 5 | NGTB30N65IHL2WG |
ON Semiconductor |
IGBT |
|
| 6 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT |
|
| 7 | NGTB30N120IHLWG |
ON Semiconductor |
IGBT |
|
| 8 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT |
|
| 9 | NGTB30N120IHSWG |
ON Semiconductor |
IGBT |
|
| 10 | NGTB30N120L2WG |
ON Semiconductor |
IGBT |
|
| 11 | NGTB30N120LWG |
ON Semiconductor |
IGBT |
|
| 12 | NGTB30N135IHR1WG |
ON Semiconductor |
IGBT |
|