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NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation • Soft F.
a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage Collector current
@ TC = 25°C @ TC = 100°C
VCES 600 V IC A 60 30
Pulsed collector current, Tpuls.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NGTB30N60FLWG |
ON Semiconductor |
IGBT |
|
| 2 | NGTB30N60IHLWG |
ON Semiconductor |
IGBT |
|
| 3 | NGTB30N60L2WG |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | NGTB30N60SWG |
ON Semiconductor |
IGBT |
|
| 5 | NGTB30N65IHL2WG |
ON Semiconductor |
IGBT |
|
| 6 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT |
|
| 7 | NGTB30N120IHLWG |
ON Semiconductor |
IGBT |
|
| 8 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT |
|
| 9 | NGTB30N120IHSWG |
ON Semiconductor |
IGBT |
|
| 10 | NGTB30N120L2WG |
ON Semiconductor |
IGBT |
|
| 11 | NGTB30N120LWG |
ON Semiconductor |
IGBT |
|
| 12 | NGTB30N135IHR1WG |
ON Semiconductor |
IGBT |
|