NGTB30N60L2WG |
Part Number | NGTB30N60L2WG |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (T... |
Features |
• IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications • Maximum junction temperature Tj=175°C • Diode VF=1.7V typ. (IF=30A) • Diode trr=70ns typ. • 5μs short circuit capability • Pb-free, Halogen-free and RoHS Compliance Electrical Connection C G N-channel E Applications • Power factor correction of white goods appliance Specifications Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tj... |
Document |
NGTB30N60L2WG Data Sheet
PDF 764.45KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NGTB30N60FLWG |
ON Semiconductor |
IGBT | |
2 | NGTB30N60FWG |
ON Semiconductor |
IGBT | |
3 | NGTB30N60IHLWG |
ON Semiconductor |
IGBT | |
4 | NGTB30N60SWG |
ON Semiconductor |
IGBT | |
5 | NGTB30N65IHL2WG |
ON Semiconductor |
IGBT |