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NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated int.
a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features
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Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NGTB30N120IHRWG |
ON Semiconductor |
IGBT |
|
| 2 | NGTB30N120IHSWG |
ON Semiconductor |
IGBT |
|
| 3 | NGTB30N120FL2WG |
ON Semiconductor |
IGBT |
|
| 4 | NGTB30N120L2WG |
ON Semiconductor |
IGBT |
|
| 5 | NGTB30N120LWG |
ON Semiconductor |
IGBT |
|
| 6 | NGTB30N135IHR1WG |
ON Semiconductor |
IGBT |
|
| 7 | NGTB30N135IHRWG |
ON Semiconductor |
IGBT |
|
| 8 | NGTB30N140IHR3WG |
ON Semiconductor |
IGBT |
|
| 9 | NGTB30N60FLWG |
ON Semiconductor |
IGBT |
|
| 10 | NGTB30N60FWG |
ON Semiconductor |
IGBT |
|
| 11 | NGTB30N60IHLWG |
ON Semiconductor |
IGBT |
|
| 12 | NGTB30N60L2WG |
ON Semiconductor |
N-Channel IGBT |
|