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The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO C RE2 NE97833 2SA1.
• HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE02133
• HIGH INSERTION POWER GAIN:
|S21E|2 = 10 dB at 1 GHz
NE97833
33 (SOT 23 STYLE)
DESCRIPTION
The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE ICBO IEBO C
RE2
NE97833 2SA1978 33 UNITS GHz dB dB.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NE97733 |
California Eastern Labs |
SILICON TRANSISTOR |
|
| 2 | NE9000xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 3 | NE900175 |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 4 | NE9001xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 5 | NE9002xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 6 | NE944 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
|
| 7 | NE94430 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
|
| 8 | NE94433 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
|
| 9 | NE960R2 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET |
|
| 10 | NE960R200 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET |
|
| 11 | NE960R275 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET |
|
| 12 | NE960R5 |
NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET |
|